plastic darlington complementary silicon power transistors . . . designed for generalpurpose amplifier and lowspeed switching applications. ? high dc current gain e h fe = 2000 (typ) @ i c = 2.0 adc ? collectoremitter sustaining voltage e @ 100 madc v ceo(sus) = 60 vdc (min) e 2n6035, 2n6038 = 80 vdc (min) e 2n6036, 2n6039 ? forward biased second breakdown current capability i s/b = 1.5 adc @ 25 vdc ? monolithic construction with builtin baseemitter resistors to limit e leakage multiplication ? spacesaving high performancetocost ratio to225aa plastic package ??????????????????????? ??????????????????????? maximum ratings (1) ??????????? ??????????? rating ????? ????? symbol ???? ???? 2n6035 2n6038 ???? ???? 2n6036 2n6039 ??? ??? unit ??????????? ??????????? collectoremitter voltage ????? ????? v ceo ???? ???? 60 ???? ???? 80 ??? ??? vdc ??????????? ??????????? collectorbase voltage ????? ????? v cb ???? ???? 60 ???? ???? 80 ??? ??? vdc ??????????? ??????????? emitterbase voltage ????? ????? v eb ??????? ??????? 5.0 ??? ??? vdc ??????????? ??????????? collector current e continuous peak ????? ????? i c ??????? ??????? 4.0 8.0 ??? ??? adc ??????????? ??????????? base current ????? ????? i b ??????? ??????? 100 ??? ??? madc ??????????? ??????????? total power dissipation @ t c = 25 c derate above 25 c ????? ????? p d ??????? ??????? 40 0.32 ??? ??? watts w/ c ??????????? ? ????????? ? ??????????? total power dissipation @ t a = 25 c derate above 25 c ????? ? ??? ? ????? p d ??????? ? ????? ? ??????? 1.5 0.012 ??? ? ? ? ??? watts ??????????? ??????????? operating and storage junction temperature range ????? ????? t j , t stg ??????? ??????? 65 to +150 ??? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 3.12 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ????? ????? q ja ?????? ?????? 83.3 ??? ??? c/w (1) indicates jedec registered data. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 9 1 publication order number: 2n6035/d 2n6035 2n6036 2n6038 2n6039 *on semiconductor preferred device darlington 4ampere complementary silicon power transistors 60, 80 volts 40 watts * * case 7709 to225aa type pnp npn
2n6035 2n6036 2n6038 2n6039 http://onsemi.com 2 40 0 0 20 40 60 80 100 120 160 figure 1. power derating t, temperature ( c) p d , power dissipation (watts) 20 10 30 140 t c 4.0 0 2.0 1.0 3.0 t a t a t c
2n6035 2n6036 2n6038 2n6039 http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ? ???????????????????? ? ?????????????????????? characteristic ????? ? ??? ? ????? symbol ??? ? ? ? ??? min ???? ? ?? ? ???? max ??? ? ? ? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (i c = 100 madc, i b = 0) 2n6035, 2n6038 2n6036, 2n6039 ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 60 80 ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectorcutoff current (v ce = 60 vdc, i b = 0) 2n6035, 2n6038 (v ce = 80 vdc, i b = 0) 2n6036, 2n6039 ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 100 100 ??? ? ? ? ? ? ? ??? m a ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectorcutoff current (v ce = 60 vdc, v be(off) = 1.5 vdc) 2n6035, 2n6038 (v ce = 80 vdc, v be(off) = 1.5 vdc) 2n6036, 2n6039 (v ce = 60 vdc, v be(off) = 1.5 vdc, t c = 125 c) 2n6035, 2n6038 (v ce = 80 vdc, v be(off) = 1.5 vdc, t c = 125 c) 2n6036, 2n6039 ????? ? ??? ? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 100 100 500 500 ??? ? ? ? ? ? ? ? ? ? ??? m a ?????????????????????? ? ???????????????????? ? ?????????????????????? collectorcutoff current (v cb = 60 vdc, i e = 0) 2n6035, 2n6038 (v cb = 80 vdc, i e = 0) 2n6036, 2n6039 ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.5 0.5 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? emittercutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 2.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 0.5 adc, v ce = 3.0 vdc) (i c = 2.0 adc, v ce = 3.0 vdc) (i c = 4.0 adc, v ce = 3.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 500 750 100 ???? ? ?? ? ? ?? ? ???? e 15,000 e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 2.0 adc, i b = 8.0 madc) (i c = 4.0 adc, i b = 40 madc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 2.0 3.0 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter saturation voltage (i c = 4.0 adc, i b = 40 madc) ????? ????? v be(sat) ??? ??? e ???? ???? 4.0 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 2.0 adc, v ce = 3.0 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 2.8 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? smallsignal currentgain (i c = 0.75 adc, v ce = 10 vdc, f = 1.0 mhz) ????? ????? |h fe | ??? ??? 25 ???? ???? e ??? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) 2n6035, 2n6036 2n6038, 2n6039 ????? ? ??? ? ? ??? ? ????? c ob ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 200 100 ??? ? ? ? ? ? ? ??? pf *indicates jedec registered data.
2n6035 2n6036 2n6038 2n6039 http://onsemi.com 4 figure 2. switching times test circuit 4.0 0.04 figure 3. switching times i c , collector current (amp) t, time (s) m 2.0 1.0 0.6 0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.4 0.8 pnp npn t f t r t s t d @ v be(off) = 0 v 2 approx +8.0 v v 1 approx -12 v t r , t f 10 ns duty cycle = 1.0% 25 m s 0 r b 51 d 1 +4.0 v v cc -30 v r c tut 8.0 k 60 scope for t d and t r , d 1 is disconnected and v 2 = 0, r b and r c are varied to obtain desired test currents. for npn test circuit, reverse diode, polarities and input pulses. r b & r c varied to obtain desired current levels d 1 must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance, normalized 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100 0 500 q jc (t) = r(t) q jc q jc = 3.12 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.03 0.3 3.0 30 300
2n6035 2n6036 2n6038 2n6039 http://onsemi.com 5 activeregion safeoperating area 1.0 5.0 figure 5. 2n6035, 2n6036 v ce , collector-emitter voltage (volts) 7.0 5.0 3.0 2.0 0.1 7.0 10 30 50 100 bonding wire limited thermally limited 70 1.0 i c , collector current (amp) t j = 150 c dc 1.0ms 100 m s figure 6. 2n6038, 2n6039 0.7 0.5 0.2 20 2n6036 2n6035 0.3 1.0 5.0 v ce , collector-emitter voltage (volts) 7.0 5.0 3.0 2.0 0.1 7.0 10 30 50 100 70 1.0 i c , collector current (amp) 0.7 0.5 0.2 20 2n6039 2n6038 0.3 5.0ms @ t c = 25 c (single pulse) second breakdown limited 100 m s 1.0ms 5.0ms dc bonding wire limited thermally limited t j = 150 c @ t c = 25 c (single pulse) second breakdown limited there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 5 and 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 0.04 v r , reverse voltage (volts) 10 0.4 0.6 1.0 2.0 40 4.0 0.06 0.1 0.2 c, capacitance (pf) 100 50 30 t c = 25 c c ib 70 c ob pnp npn figure 7. capacitance 20 6.0 10 20
2n6035 2n6036 2n6038 2n6039 http://onsemi.com 6 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 6.0 k 0.04 figure 8. dc current gain i c , collector current (amp) 300 0.06 0.1 0.2 0.6 1.0 4.0 600 800 400 h fe , dc current gain 1.0 k 2.0 k v ce = 3.0 v 0.4 2.0 pnp 2n6035, 2n6036 npn 2n6038, 2n6039 figure 9. collector saturation region 3.4 0.1 i b , base current (ma) 0.6 0.2 1.0 2.0 10 100 2.2 1.8 i c = 0.5 a t j = 25 c 1.0 a 2.6 3.0 0.5 5.0 2.2 0.04 i c , collector current (amp) 0.06 0.1 0.2 0.4 0.6 2.0 4.0 1.8 1.4 1.0 0.6 0.2 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v, voltage (volts) figure 10. aono voltages v be @ v ce = 3.0 v 1.0 4.0 k 3.0 k t c = 125 c 25 c -55 c 20 50 6.0 k 0.04 i c , collector current (amp) 300 0.06 0.1 0.2 0.6 1.0 4.0 600 800 400 h fe , dc current gain 1.0 k 2.0 k v ce = 3.0 v 0.4 2.0 4.0 k 3.0 k t j = 125 c 25 c -55 c 1.4 1.0 2.0 a 4.0 a 3.4 0.1 i b , base current (ma) 0.6 0.2 1.0 2.0 10 100 2.2 1.8 i c = 0.5 a t j = 25 c 1.0 a 2.6 3.0 0.5 5.0 20 50 1.4 1.0 2.0 a 4.0 a i c , collector current (amp) 2.2 0.04 0.06 0.1 0.2 0.4 0.6 2.0 4.0 1.8 1.4 1.0 0.6 0.2 v, voltage (volts) 1.0 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v be @ v ce = 3.0 v
2n6035 2n6036 2n6038 2n6039 http://onsemi.com 7 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 ---
2n6035 2n6036 2n6038 2n6039 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 2n6035/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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